| Part Number: | VSGB200TH120N |
| Product Name: | VSGB200TH120N Transistors - IGBTs - Modules |
| Merchant-Specific Identifier: | VSGB200TH120N |
| Category: | Discrete Semiconductor Products > Transistors - IGBTs - Modules |
| Brand: | Vishay Semiconductor Diodes Division |
| Description: | IGBT 1200V 360A 1136W INT-A-PAK |
| Series: | - |
| IGBT Type: | - |
| Configuration: | Half Bridge |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| Current - Collector (Ic) (Max): | 360A |
| Power - Max: | 1136W |
| Vce(on) (Max) @ Vge, Ic: | 2.35V @ 15V, 200A |
| Current - Collector Cutoff (Max): | 5mA |
| Input Capacitance (Cies) @ Vce: | 14.9nF @ 25V |
| Input: | Standard |
| NTC Thermistor: | No |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | Double INT-A-PAK (3 + 4) |
| Supplier Device Package: | Double INT-A-PAK |
Part Number
Brand
D/C
Qty
VS-GB200TH120N original new
original new
1846
USD 0
VS-GB200TH120N Vishay Semiconductor Diodes Division
Vishay Semiconductor Diodes Division
8000
USD 0
VS-GB200TH120N Vishay Semiconductor Diodes Division 20+
Vishay Semiconductor Diodes Division
20+
81630
USD 0
VS-GB200TH120N Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
5000
USD 0
VS-GB200TH120N
1846
USD 0
VS-GB200TH120N original new
original new
1846
USD 0
VS-GB200TH120N Vishay Semiconductor Diodes Division
Vishay Semiconductor Diodes Division
8000
USD 0
VS-GB200TH120N Vishay Semiconductor Diodes Division 20+
Vishay Semiconductor Diodes Division
20+
81630
USD 0
VS-GB200TH120N Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
5000
USD 0
VS-GB200TH120N
1846
USD 0
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