Part Number: | VSGB150TH120N |
Product Name: | VSGB150TH120N Transistors - IGBTs - Modules |
Merchant-Specific Identifier: | VSGB150TH120N |
Category: | Discrete Semiconductor Products > Transistors - IGBTs - Modules |
Brand: | Vishay Semiconductor Diodes Division |
Description: | IGBT 1200V 300A 1008W INT-A-PAK |
Series: | - |
IGBT Type: | - |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 300A |
Power - Max: | 1008W |
Vce(on) (Max) @ Vge, Ic: | 2.35V @ 15V, 150A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 11nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Double INT-A-PAK (3 + 4) |
Supplier Device Package: | Double INT-A-PAK |
Part Number
Brand
D/C
Qty
VS-GB150TH120N original new
original new
60
USD 0
VS-GB150TH120N Vishay Semiconductor Diodes Division
Vishay Semiconductor Diodes Division
8000
USD 0
VS-GB150TH120N Vishay Semiconductor Diodes Division 20+
Vishay Semiconductor Diodes Division
20+
81630
USD 0
VS-GB150TH120N Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
5000
USD 0
VS-GB150TH120N
60
USD 0
VS-GB150TH120N original new
original new
60
USD 0
VS-GB150TH120N Vishay Semiconductor Diodes Division
Vishay Semiconductor Diodes Division
8000
USD 0
VS-GB150TH120N Vishay Semiconductor Diodes Division 20+
Vishay Semiconductor Diodes Division
20+
81630
USD 0
VS-GB150TH120N Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
5000
USD 0
VS-GB150TH120N
60
USD 0