Part Number: | UMG4N7 |
Product Name: | UMG4N7 Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Merchant-Specific Identifier: | UMG4N7 |
Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand: | Diodes Incorporated |
Description: | TRANS 2NPN PREBIAS 0.15W SOT353 |
Series: | - |
Packaging: | Tape & Reel (TR) |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1) (Ohms): | 10k |
Resistor - Emitter Base (R2) (Ohms): | - |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | - |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | 5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package: | SOT-353 |
Part Number
Brand
D/C
Qty
UMG4N-7 DIODES/ 2022
DIODES/
2022
20000
USD 0
UMG4N-7 DIODES 20+
DIODES
20+
3000
USD 0
UMG4N-7 Diodes Incorporated 2023+
Diodes Incorporated
2023+
58338
USD 0
UMG4N-7 DIODES/ 2022
DIODES/
2022
20000
USD 0
UMG4N-7 DIODES 20+
DIODES
20+
3000
USD 0
UMG4N-7 Diodes Incorporated 2023+
Diodes Incorporated
2023+
58338
USD 0