| Part Number: | TPN7R506NHL1Q |
| Product Name: | TPN7R506NHL1Q Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | TPN7R506NHL1Q |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | MOSFET N-CH 60V 26A 8TSON |
| Series: | U-MOSVIII-H |
| Packaging: | Tape & Reel (TR) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 6.5V, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 30V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 700mW (Ta), 42W (Tc) |
| Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 13A, 10V |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-TSON Advance (3.3x3.3) |
| Package / Case: | 8-PowerVDFN |
Part Number
Brand
D/C
Qty
TPN7R506NH,L1Q(M TOSHIBA/ 2022
TOSHIBA/
2022
11470
USD 0
TPN7R506NH,L1Q(M 22+
22+
7065
USD 0
TPN7R506NH,L1Q 22+
22+
7054
USD 0
TPN7R506NH,L1Q(M ORIGINAL 22+
ORIGINAL
22+
5415
USD 0
TPN7R506NH,L1Q M TOSHIBA
TOSHIBA
470
USD 0
TPN7R506NH,L1Q(M TOSHIBA/ 2022
TOSHIBA/
2022
11470
USD 0
TPN7R506NH,L1Q(M 22+
22+
7065
USD 0
TPN7R506NH,L1Q 22+
22+
7054
USD 0
TPN7R506NH,L1Q(M ORIGINAL 22+
ORIGINAL
22+
5415
USD 0
TPN7R506NH,L1Q M TOSHIBA
TOSHIBA
470
USD 0
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