| Part Number: | TPN4R712MDL1Q |
| Product Name: | TPN4R712MDL1Q Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | TPN4R712MDL1Q |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | MOSFET P-CH 20V 36A 8TSON ADV |
| Series: | U-MOSVI |
| Packaging: | Cut Tape (CT) |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id: | 1.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 4300pF @ 10V |
| Vgs (Max): | ±12V |
| FET Feature: | - |
| Power Dissipation (Max): | 42W (Tc) |
| Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 18A, 4.5V |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-TSON Advance (3.3x3.3) |
| Package / Case: | 8-PowerVDFN |
Part Number
Brand
D/C
Qty
TPN4R712MD,L1Q(M TOSHIBA 2021+
TOSHIBA
2021+
8000
USD 0
TPN4R712MD,L1Q TOSHIBA
TOSHIBA
4100
USD 0
TPN4R712MDL1Q Toshiba
Toshiba
1000
USD 0
TPN4R712MD,L1Q TOSHIBA 15+
TOSHIBA
15+
67928
USD 0
TPN4R712MD,L1Q Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
572
USD 0
TPN4R712MD,L1Q(M TOSHIBA 2021+
TOSHIBA
2021+
8000
USD 0
TPN4R712MD,L1Q TOSHIBA
TOSHIBA
4100
USD 0
TPN4R712MDL1Q Toshiba
Toshiba
1000
USD 0
TPN4R712MD,L1Q TOSHIBA 15+
TOSHIBA
15+
67928
USD 0
TPN4R712MD,L1Q Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
572
USD 0
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