| Part Number: | TPN14006NHL1Q |
| Product Name: | TPN14006NHL1Q Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | TPN14006NHL1Q |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | MOSFET N CH 60V 13A 8TSON-ADV |
| Series: | U-MOSVIII-H |
| Packaging: | |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 4V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 30V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 700mW (Ta), 30W (Tc) |
| Rds On (Max) @ Id, Vgs: | 14 mOhm @ 6.5A, 10V |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-TSON Advance (3.3x3.3) |
| Package / Case: | 8-PowerVDFN |
Part Number
Brand
D/C
Qty
TPN14006NH,L1Q(M TOSHIBA
TOSHIBA
10000
USD 0
TPN14006NH,L1Q TOSHIBA
TOSHIBA
10000
USD 0
TPN14006NH,L1Q Toshiba Semiconductor and Storage 23+
Toshiba Semiconductor and Storage
23+
16660
USD 0
TPN14006NH,L1Q TOSHIBA/
TOSHIBA/
33586
USD 0
TPN14006NH,L1Q Toshiba Semiconductor and Storage 21+
Toshiba Semiconductor and Storage
21+
81630
USD 0
TPN14006NH,L1Q(M TOSHIBA
TOSHIBA
10000
USD 0
TPN14006NH,L1Q TOSHIBA
TOSHIBA
10000
USD 0
TPN14006NH,L1Q Toshiba Semiconductor and Storage 23+
Toshiba Semiconductor and Storage
23+
16660
USD 0
TPN14006NH,L1Q TOSHIBA/
TOSHIBA/
33586
USD 0
TPN14006NH,L1Q Toshiba Semiconductor and Storage 21+
Toshiba Semiconductor and Storage
21+
81630
USD 0
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