Part Number: | TPH1110ENHL1Q |
Product Name: | TPH1110ENHL1Q Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | TPH1110ENHL1Q |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Toshiba Semiconductor and Storage |
Description: | MOSFET N-CH 200V 7.2A 8SOP |
Series: | U-MOSVIII-H |
Packaging: | |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 7.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Vgs(th) (Max) @ Id: | 4V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 100V |
Vgs (Max): | - |
FET Feature: | - |
Power Dissipation (Max): | 1.6W (Ta), 42W (Tc) |
Rds On (Max) @ Id, Vgs: | 114 mOhm @ 3.6A, 10V |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOP Advance (5x5) |
Package / Case: | 8-PowerVDFN |
Part Number
Brand
D/C
Qty
TPH1110ENH,L1Q(M TOSHIBA 22+
TOSHIBA
22+
4200
USD 0
TPH1110ENH,L1Q
200
USD 0
TPH1110ENH,L1Q TOSHIBA
TOSHIBA
5000
USD 0
TPH1110ENH,L1Q TOSHIBA 22+
TOSHIBA
22+
4200
USD 0
TPH1110ENH,L1Q Toshiba Semiconductor and Storage 23+
Toshiba Semiconductor and Storage
23+
16660
USD 0
TPH1110ENH,L1Q(M TOSHIBA 22+
TOSHIBA
22+
4200
USD 0
TPH1110ENH,L1Q
200
USD 0
TPH1110ENH,L1Q TOSHIBA
TOSHIBA
5000
USD 0
TPH1110ENH,L1Q TOSHIBA 22+
TOSHIBA
22+
4200
USD 0
TPH1110ENH,L1Q Toshiba Semiconductor and Storage 23+
Toshiba Semiconductor and Storage
23+
16660
USD 0