Part Number: | TK65E10N1S1X |
Product Name: | TK65E10N1S1X Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | TK65E10N1S1X |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Toshiba Semiconductor and Storage |
Description: | MOSFET N CH 100V 148A TO220 |
Series: | U-MOSVIII-H |
Packaging: | Tube |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 148A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 81nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 5400pF @ 50V |
Vgs (Max): | ±20V |
FET Feature: | - |
Power Dissipation (Max): | 192W (Tc) |
Rds On (Max) @ Id, Vgs: | 4.8 mOhm @ 32.5A, 10V |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
Part Number
Brand
D/C
Qty
TK65E10N1S1X(S TOSHIBA
TOSHIBA
11376
USD 0
TK65E10N1,S1X(S TOSHIBA/
TOSHIBA/
12078
USD 0
TK65E10N1,S1X(S TOSHIBA 2217+
TOSHIBA
2217+
6000
USD 0
TK65E10N1,S1X(S TOSHIBA 2207+
TOSHIBA
2207+
3150
USD 0
TK65E10N1,S1X(S TOSHIBA 2202+
TOSHIBA
2202+
1600
USD 0
TK65E10N1S1X(S TOSHIBA
TOSHIBA
11376
USD 0
TK65E10N1,S1X(S TOSHIBA/
TOSHIBA/
12078
USD 0
TK65E10N1,S1X(S TOSHIBA 2217+
TOSHIBA
2217+
6000
USD 0
TK65E10N1,S1X(S TOSHIBA 2207+
TOSHIBA
2207+
3150
USD 0
TK65E10N1,S1X(S TOSHIBA 2202+
TOSHIBA
2202+
1600
USD 0