| Part Number: | TK31J60WS1VQ |
| Product Name: | TK31J60WS1VQ Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | TK31J60WS1VQ |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | MOSFET N CH 600V 30.8A TO-3P(N) |
| Series: | DTMOSIV |
| Packaging: | Tube |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600V |
| Current - Continuous Drain (Id) @ 25°C: | 30.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Vgs(th) (Max) @ Id: | 3.7V @ 1.5mA |
| Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 300V |
| Vgs (Max): | ±30V |
| FET Feature: | Super Junction |
| Power Dissipation (Max): | 230W (Tc) |
| Rds On (Max) @ Id, Vgs: | 88 mOhm @ 15.4A, 10V |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-3P(N) |
| Package / Case: | TO-3P-3, SC-65-3 |
Part Number
Brand
D/C
Qty
TK31J60WS1VQ(O TOS 13
TOS
13
50
USD 0
TK31J60WS1VQ TOSHIBA/
TOSHIBA/
11017
USD 0
TK31J60W,S1VQ(O N/A
N/A
5000
USD 0
TK31J60W,S1VQ TOSHIBA 2018+
TOSHIBA
2018+
12000
USD 0
TK31J60W,S1VQ TOSHIBA 2022+
TOSHIBA
2022+
13500
USD 0
TK31J60WS1VQ(O TOS 13
TOS
13
50
USD 0
TK31J60WS1VQ TOSHIBA/
TOSHIBA/
11017
USD 0
TK31J60W,S1VQ(O N/A
N/A
5000
USD 0
TK31J60W,S1VQ TOSHIBA 2018+
TOSHIBA
2018+
12000
USD 0
TK31J60W,S1VQ TOSHIBA 2022+
TOSHIBA
2022+
13500
USD 0
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