| Part Number: | TK28N65WS1F |
| Product Name: | TK28N65WS1F Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | TK28N65WS1F |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | MOSFET N-CH 650V 27.6A TO247 |
| Series: | DTMOSIV |
| Packaging: | Tube |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650V |
| Current - Continuous Drain (Id) @ 25°C: | 27.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Vgs(th) (Max) @ Id: | 3.5V @ 1.6mA |
| Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 300V |
| Vgs (Max): | ±30V |
| FET Feature: | - |
| Power Dissipation (Max): | 230W (Tc) |
| Rds On (Max) @ Id, Vgs: | 110 mOhm @ 13.8A, 10V |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247 |
| Package / Case: | TO-247-3 |
Part Number
Brand
D/C
Qty
TK28N65W,S1F(S TOSHIBA/ 2022
TOSHIBA/
2022
368000
USD 0
TK28N65W,S1F(S TOSHIBA/ 2022
TOSHIBA/
2022
568600
USD 0
TK28N65W,S1F(S,TSB
1020
USD 0
TK28N65W,S1F
1020
USD 0
TK28N65W,S1F Toshiba Semiconductor and Storage 23+
Toshiba Semiconductor and Storage
23+
16660
USD 0
TK28N65W,S1F(S TOSHIBA/ 2022
TOSHIBA/
2022
368000
USD 0
TK28N65W,S1F(S TOSHIBA/ 2022
TOSHIBA/
2022
568600
USD 0
TK28N65W,S1F(S,TSB
1020
USD 0
TK28N65W,S1F
1020
USD 0
TK28N65W,S1F Toshiba Semiconductor and Storage 23+
Toshiba Semiconductor and Storage
23+
16660
USD 0
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