| Part Number: | TK10J80ES1E |
| Product Name: | TK10J80ES1E Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | TK10J80ES1E |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | MOSFET N-CH 800V TO-3PN |
| Series: | 蟺-MOSVIII |
| Packaging: | Tube |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 800V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 25V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 250W (Tc) |
| Rds On (Max) @ Id, Vgs: | 1 Ohm @ 5A, 10V |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-3P(N) |
| Package / Case: | TO-3P-3, SC-65-3 |
Part Number
Brand
D/C
Qty
TK10J80E,S1E TOSHIBA 13+
TOSHIBA
13+
3500
USD 0
TK10J80E,S1E Toshiba Semiconductor and Storage 23+
Toshiba Semiconductor and Storage
23+
16660
USD 0
TK10J80E,S1E Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
5000
USD 0
TK10J80E,S1E Toshiba Semiconductor and Storage 21+
Toshiba Semiconductor and Storage
21+
81630
USD 0
TK10J80E,S1E TOSHIBA 13+
TOSHIBA
13+
3500
USD 0
TK10J80E,S1E TOSHIBA 13+
TOSHIBA
13+
3500
USD 0
TK10J80E,S1E Toshiba Semiconductor and Storage 23+
Toshiba Semiconductor and Storage
23+
16660
USD 0
TK10J80E,S1E Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
5000
USD 0
TK10J80E,S1E Toshiba Semiconductor and Storage 21+
Toshiba Semiconductor and Storage
21+
81630
USD 0
TK10J80E,S1E TOSHIBA 13+
TOSHIBA
13+
3500
USD 0
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