| Part Number: | TK100E08N1S1X |
| Product Name: | TK100E08N1S1X Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | TK100E08N1S1X |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | MOSFET N-CH 80V 100A TO220 |
| Series: | U-MOSVIII-H |
| Packaging: | Tube |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 80V |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 9000pF @ 40V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 255W (Tc) |
| Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 50A, 10V |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220 |
| Package / Case: | TO-220-3 |
Part Number
Brand
D/C
Qty
TK100E08N1,S1X(S N/A
N/A
5000
USD 0
TK100E08N1S1X TOSHIBA 21+
TOSHIBA
21+
10000
USD 0
TK100E08N1,S1X(S TOSHIBA
TOSHIBA
10000
USD 0
TK100E08N1,S1X(S TOSHIBA 20+
TOSHIBA
20+
8000
USD 0
TK100E08N1,S1X(S N/A
N/A
5000
USD 0
TK100E08N1S1X TOSHIBA 21+
TOSHIBA
21+
10000
USD 0
TK100E08N1,S1X(S TOSHIBA
TOSHIBA
10000
USD 0
TK100E08N1,S1X(S TOSHIBA 20+
TOSHIBA
20+
8000
USD 0
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