| Part Number: | TJ8S06M3L |
| Product Name: | TJ8S06M3L Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | TJ8S06M3L |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | MOSFET P-CH 60V 8A DPAK-3 |
| Series: | U-MOSVI |
| Packaging: | Tape & Reel (TR) |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 890pF @ 10V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 27W (Tc) |
| Rds On (Max) @ Id, Vgs: | 104 mOhm @ 4A, 10V |
| Operating Temperature: | 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | DPAK+ |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Part Number
Brand
D/C
Qty
TJ8S06M3L(T6L1.NQ)
TOSHIBA
2021
TOSHIBA
2021
1089
USD 0
TJ8S06M3L TOSHIBA
TOSHIBA
180
USD 0
TJ8S06M3L TOSHIBA
TOSHIBA
180
USD 0
TJ8S06M3L TOS
TOS
180
USD 0
TJ8S06M3L 2000
2000
180
USD 0
TJ8S06M3L(T6L1.NQ)
TOSHIBA
2021
TOSHIBA
2021
1089
USD 0
TJ8S06M3L TOSHIBA
TOSHIBA
180
USD 0
TJ8S06M3L TOSHIBA
TOSHIBA
180
USD 0
TJ8S06M3L TOS
TOS
180
USD 0
TJ8S06M3L 2000
2000
180
USD 0
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