| Part Number: | TJ10S04M3L |
| Product Name: | TJ10S04M3L Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | TJ10S04M3L |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | MOSFET P-CH 40V 10A DPAK-3 |
| Series: | U-MOSVI |
| Packaging: | Tape & Reel (TR) |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 40V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 930pF @ 10V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 27W (Tc) |
| Rds On (Max) @ Id, Vgs: | 44 mOhm @ 5A, 10V |
| Operating Temperature: | 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | DPAK+ |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Part Number
Brand
D/C
Qty
TJ10S04M3L TOSHIBA 2022
TOSHIBA
2022
13130
USD 0
TJ10S04M3L Toshiba
Toshiba
12000
USD 0
TJ10S04M3L TOSHIBA 13+
TOSHIBA
13+
2000
USD 0
TJ10S04M3L ORIGINAL 22+
ORIGINAL
22+
5000
USD 0
TJ10S04M3L TOSHIBA 23+
TOSHIBA
23+
360000
USD 0
TJ10S04M3L TOSHIBA 2022
TOSHIBA
2022
13130
USD 0
TJ10S04M3L Toshiba
Toshiba
12000
USD 0
TJ10S04M3L TOSHIBA 13+
TOSHIBA
13+
2000
USD 0
TJ10S04M3L ORIGINAL 22+
ORIGINAL
22+
5000
USD 0
TJ10S04M3L TOSHIBA 23+
TOSHIBA
23+
360000
USD 0
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