Part Number: | TC58BVG0S3HBAI6 |
Product Name: | TC58BVG0S3HBAI6 Memory |
Merchant-Specific Identifier: | TC58BVG0S3HBAI6 |
Category: | Integrated Circuits (ICs) > Memory |
Brand: | Toshiba Semiconductor and Storage |
Description: | IC EEPROM 1GBIT 25NS 67VFBGA |
Series: | Benand |
Packaging: | Non-Volatile |
Memory Type: | Tray |
Memory Format: | EEPROM |
Technology: | EEPROM - NAND |
Memory Size: | 1Gb (128M x 8) |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 67-VFBGA |
Supplier Device Package: | 67-VFBGA (6.5x8) |
Part Number
Brand
D/C
Qty
TC58BVG0S3HBAI6 TOS
TOS
20103
USD 0
TC58BVG0S3HBAI6 TOSHIBA
TOSHIBA
35158
USD 0
TC58BVG0S3HBAI6 Toshiba 15+
Toshiba
15+
8603
USD 0
TC58BVG0S3HBAI6 TOSHIBA/ 2022
TOSHIBA/
2022
11774
USD 0
TC58BVG0S3HBAI6 TOS
TOS
20103
USD 0
TC58BVG0S3HBAI6 TOSHIBA
TOSHIBA
35158
USD 0
TC58BVG0S3HBAI6 Toshiba 15+
Toshiba
15+
8603
USD 0
TC58BVG0S3HBAI6 TOSHIBA/ 2022
TOSHIBA/
2022
11774
USD 0