Part Number: | SUP60N0612PGE3 |
Product Name: | SUP60N0612PGE3 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | SUP60N0612PGE3 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Vishay Siliconix |
Description: | MOSFET N-CH 60V 60A TO220AB |
Series: | TrenchFET |
Packaging: | Tape & Reel (TR) |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1970pF @ 30V |
Vgs (Max): | - |
FET Feature: | - |
Power Dissipation (Max): | 3.25W (Ta), 100W (Tc) |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 30A, 10V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Part Number
Brand
D/C
Qty
SUP60N0612PGE3 VISHAY
VISHAY
2120
USD 0
SUP60N06-12P-GE3 VBSEMI/ 2022
VBSEMI/
2022
21065
USD 0
SUP60N06-12P-GE3 VBsemi 21+
VBsemi
21+
10065
USD 0
SUP60N06-12P-GE3 22
22
220
USD 0
SUP60N06-12P-GE3 mosfet 2023
mosfet
2023
50000
USD 0
SUP60N0612PGE3 VISHAY
VISHAY
2120
USD 0
SUP60N06-12P-GE3 VBSEMI/ 2022
VBSEMI/
2022
21065
USD 0
SUP60N06-12P-GE3 VBsemi 21+
VBsemi
21+
10065
USD 0
SUP60N06-12P-GE3 22
22
220
USD 0
SUP60N06-12P-GE3 mosfet 2023
mosfet
2023
50000
USD 0