| Part Number: | SSM3J321T |
| Product Name: | SSM3J321T Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SSM3J321T |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | MOSFET P-CH 20V 5.2A TSM |
| Series: | U-MOSV |
| Packaging: | |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 5.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 8.1nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 640pF @ 10V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 700mW (Ta) |
| Rds On (Max) @ Id, Vgs: | 46 mOhm @ 3A, 4.5V |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TSM |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Part Number
Brand
D/C
Qty
SSM3J321T
Toshiba
2021+
Toshiba
2021+
11850
USD 0
SSM3J321T TOSHBIA 2022
TOSHBIA
2022
56000
USD 0
SSM3J321T TOSHIBA 2022
TOSHIBA
2022
368000
USD 0
SSM3J321T TOSHIBA 10+
TOSHIBA
10+
45000
USD 0
SSM3J321T TOSHIBA 23+
TOSHIBA
23+
3000
USD 0
SSM3J321T
Toshiba
2021+
Toshiba
2021+
11850
USD 0
SSM3J321T TOSHBIA 2022
TOSHBIA
2022
56000
USD 0
SSM3J321T TOSHIBA 2022
TOSHIBA
2022
368000
USD 0
SSM3J321T TOSHIBA 10+
TOSHIBA
10+
45000
USD 0
SSM3J321T TOSHIBA 23+
TOSHIBA
23+
3000
USD 0
Contact Us
Copyright © 2024 Hong Kong Inventory Limited. All Rights Reserved.Designated trademarks and brands are the property of their respective owners.
Use of this Website constitutes acceptance of Hong Kong Inventory Limited Terms of Use and Privacy Policy
