| Part Number: | SQJ457EPT1 |
| Product Name: | SQJ457EPT1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SQJ457EPT1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET P-CH 60V 36A SO8 |
| Series: | Automotive, AEC-Q101, TrenchFET |
| Packaging: | Cut Tape (CT) |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3400pF @ 25V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 68W (Tc) |
| Rds On (Max) @ Id, Vgs: | 25 mOhm @ 10A, 10V |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PowerPAK SO-8 |
| Package / Case: | PowerPAK SO-8 |
Part Number
Brand
D/C
Qty
Price (USD)
Qty
SQJ457EP-T1_GE3 Vishay(威世) 22+ 0
Vishay(威世)
22+
3620
USD 0
SQJ457EP-T1_GE3 VISHAY 21+/22+ 0
VISHAY
21+/22+
10000
USD 0
SQJ457EP-T1_GE3 VISHAY 24+ 0
VISHAY
24+
1000
USD 0
SQJ457EP-T1_GE3 VISHAY 21+ 0
VISHAY
21+
3980
USD 0
SQJ457EP-T1_BE3 VISHAY 21+ 0
VISHAY
21+
26000
USD 0
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