| Part Number: | SISS27ADNT1GE3 |
| Product Name: | SISS27ADNT1GE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SISS27ADNT1GE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET P-CH 30V 50A 1212-8 |
| Series: | TrenchFET Gen III |
| Packaging: | |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 4660pF @ 15V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 57W (Tc) |
| Rds On (Max) @ Id, Vgs: | 5.1 mOhm @ 15A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PowerPAK 1212-8 |
| Package / Case: | PowerPAK 1212-8 |
Part Number
Brand
D/C
Qty
Price (USD)
Qty
SISS27ADN-T1-GE3 Vishay Semiconductors 19 0
Vishay Semiconductors
19
30000
USD 0
Part Number
Brand
D/C
Qty
SISS27ADN-T1-GE3 VISHAY 20+
VISHAY
20+
30000
USD 0
SISS27ADN-T1-GE3 VISHAY 22+
VISHAY
22+
45120
USD 0
SISS27ADN-T1-GE3 VISHAY 22+
VISHAY
22+
33000
USD 0
SISS27ADN-T1-GE3 VISHAY 20+
VISHAY
20+
30000
USD 0
SISS27ADN-T1-GE3 VISHAY 22+
VISHAY
22+
45120
USD 0
SISS27ADN-T1-GE3 VISHAY 22+
VISHAY
22+
33000
USD 0
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