Part Number: | SISA12ADNT1GE3 |
Product Name: | SISA12ADNT1GE3 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | SISA12ADNT1GE3 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Vishay Siliconix |
Description: | MOSFET N-CH 30V 25A 1212-8 |
Series: | TrenchFET |
Packaging: | Cut Tape (CT) |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2070pF @ 15V |
Vgs (Max): | +20V, -16V |
FET Feature: | - |
Power Dissipation (Max): | 3.5W (Ta), 28W (Tc) |
Rds On (Max) @ Id, Vgs: | 4.3 mOhm @ 10A, 10V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK 1212-8 |
Package / Case: | PowerPAK 1212-8 |
Part Number
Brand
D/C
Qty
Price (USD)
Qty
SISA12ADN-T1-GE3 Vishay(威世) 22/23+ 0
Vishay(威世)
22/23+
29025
USD 0
Part Number
Brand
D/C
Qty
SISA12ADN-T1-GE3 original new 21+
original new
21+
72000
USD 0
SISA12ADN-T1-GE3 21+
21+
6000
USD 0
SISA12ADN-T1-GE3
Vishay Siliconix
Vishay Siliconix
30000
USD 0
SISA12ADN-T1-GE3 original new 21+
original new
21+
72000
USD 0
SISA12ADN-T1-GE3 21+
21+
6000
USD 0
SISA12ADN-T1-GE3
Vishay Siliconix
Vishay Siliconix
30000
USD 0