| Part Number: | SIS888DNT1GE3 |
| Product Name: | SIS888DNT1GE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SIS888DNT1GE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET N-CH 150V 20.2A 1212-8S |
| Series: | ThunderFET |
| Packaging: | Tape & Reel (TR) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 150V |
| Current - Continuous Drain (Id) @ 25°C: | 20.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
| Vgs(th) (Max) @ Id: | 4.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 14.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 420pF @ 75V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 52W (Tc) |
| Rds On (Max) @ Id, Vgs: | 58 mOhm @ 10A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TA) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PowerPAK 1212-8S (3.3x3.3) |
| Package / Case: | PowerPAK 1212-8S |
Part Number
Brand
D/C
Qty
SIS888DN-T1-GE3 VISHAY/
VISHAY/
32826
USD 0
SIS888DN-T1-GE3 VISH 2315
VISH
2315
3000
USD 0
SIS888DN-T1-GE3 VISHAY 16+
VISHAY
16+
6037
USD 0
SIS888DN-T1-GE3 ORIGINAL 22+
ORIGINAL
22+
5416
USD 0
SIS888DN-T1-GE3 VISHAY 19+
VISHAY
19+
9800
USD 0
SIS888DN-T1-GE3 VISHAY/
VISHAY/
32826
USD 0
SIS888DN-T1-GE3 VISH 2315
VISH
2315
3000
USD 0
SIS888DN-T1-GE3 VISHAY 16+
VISHAY
16+
6037
USD 0
SIS888DN-T1-GE3 ORIGINAL 22+
ORIGINAL
22+
5416
USD 0
SIS888DN-T1-GE3 VISHAY 19+
VISHAY
19+
9800
USD 0
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