| Part Number: | SIS436DNT1GE3 |
| Product Name: | SIS436DNT1GE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SIS436DNT1GE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET N-CH 25V 16A PPAK 1212-8 |
| Series: | TrenchFET |
| Packaging: | Cut Tape (CT) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 25V |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 855pF @ 10V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 3.5W (Ta), 27.7W (Tc) |
| Rds On (Max) @ Id, Vgs: | 10.5 mOhm @ 10A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PowerPAK 1212-8 |
| Package / Case: | PowerPAK 1212-8 |
Part Number
Brand
D/C
Qty
SIS436DN-T1-GE3 VBsemi 21+
VBsemi
21+
10065
USD 0
SIS436DN-T1-GE3 VISHAY 10+
VISHAY
10+
7050
USD 0
SIS436DN-T1-GE3 Vishay 22+
Vishay
22+
4614
USD 0
SIS436DN-T1-GE3 VISHAY 17+
VISHAY
17+
14331
USD 0
SiS436DN-T1-GE3 VISHAY 21+
VISHAY
21+
16188
USD 0
SIS436DN-T1-GE3 VBsemi 21+
VBsemi
21+
10065
USD 0
SIS436DN-T1-GE3 VISHAY 10+
VISHAY
10+
7050
USD 0
SIS436DN-T1-GE3 Vishay 22+
Vishay
22+
4614
USD 0
SIS436DN-T1-GE3 VISHAY 17+
VISHAY
17+
14331
USD 0
SiS436DN-T1-GE3 VISHAY 21+
VISHAY
21+
16188
USD 0
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