Part Number: | SIHD12N50EGE3 |
Product Name: | SIHD12N50EGE3 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | SIHD12N50EGE3 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Vishay Siliconix |
Description: | MOSFET N-CHAN 500V DPAK |
Series: | E |
Packaging: | Cut Tape (CT) |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 550V |
Current - Continuous Drain (Id) @ 25°C: | 10.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 886pF @ 100V |
Vgs (Max): | ±30V |
FET Feature: | - |
Power Dissipation (Max): | 114W (Tc) |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 6A, 10V |
Operating Temperature: | -55°C ~ 150°C (TA) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-PAK (TO-252AA) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Part Number
Brand
D/C
Qty
SIHD12N50E-GE3 Vishay Siliconix
Vishay Siliconix
109
USD 0
SIHD12N50E-GE3 VISHAY/
VISHAY/
69580
USD 0
SIHD12N50EGE3 VISHAY/
VISHAY/
14000
USD 0
SIHD12N50E-GE3 original 18+
original
18+
2000
USD 0
SIHD12N50E-GE3 Vishay 23+
Vishay
23+
30000
USD 0
SIHD12N50E-GE3 Vishay Siliconix
Vishay Siliconix
109
USD 0
SIHD12N50E-GE3 VISHAY/
VISHAY/
69580
USD 0
SIHD12N50EGE3 VISHAY/
VISHAY/
14000
USD 0
SIHD12N50E-GE3 original 18+
original
18+
2000
USD 0
SIHD12N50E-GE3 Vishay 23+
Vishay
23+
30000
USD 0