| Part Number: | SIHB6N65EGE3 |
| Product Name: | SIHB6N65EGE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SIHB6N65EGE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET N-CH 650V 7A D2PAK |
| Series: | - |
| Packaging: | Cut Tape (CT) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650V |
| Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 820pF @ 100V |
| Vgs (Max): | ±30V |
| FET Feature: | - |
| Power Dissipation (Max): | 78W (Tc) |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 3A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D²PAK (TO-263) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Part Number
Brand
D/C
Qty
SIHB6N65E-GE3 VISHAY/
VISHAY/
10020
USD 0
SIHB6N65E-GE3
Vishay Siliconix
Vishay Siliconix
2998
USD 0
SIHB6N65E-GE3 SILICON 17
SILICON
17
100
USD 0
SIHB6N65E-GE3 VISHAY 17+
VISHAY
17+
3122
USD 0
SIHB6N65E-GE3 Vishay 23/22+
Vishay
23/22+
5000
USD 0
SIHB6N65E-GE3 VISHAY/
VISHAY/
10020
USD 0
SIHB6N65E-GE3
Vishay Siliconix
Vishay Siliconix
2998
USD 0
SIHB6N65E-GE3 SILICON 17
SILICON
17
100
USD 0
SIHB6N65E-GE3 VISHAY 17+
VISHAY
17+
3122
USD 0
SIHB6N65E-GE3 Vishay 23/22+
Vishay
23/22+
5000
USD 0
Contact Us
Copyright © 2025 Hong Kong Inventory Limited. All Rights Reserved.Designated trademarks and brands are the property of their respective owners.
Use of this Website constitutes acceptance of Hong Kong Inventory Limited Terms of Use and Privacy Policy
