| Part Number: | SIHB35N60EGE3 |
| Product Name: | SIHB35N60EGE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SIHB35N60EGE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET N-CH 600V 32A D2PAK TO263 |
| Series: | - |
| Packaging: | Tube |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650V |
| Current - Continuous Drain (Id) @ 25°C: | 32A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 132nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2760pF @ 100V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 250W (Tc) |
| Rds On (Max) @ Id, Vgs: | 94 mOhm @ 17A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D²PAK (TO-263) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Part Number
Brand
D/C
Qty
SIHB35N60E-GE3 Vishay Siliconix 21+
Vishay Siliconix
21+
1792
USD 0
SIHB35N60E-GE3 Vishay 23/22+
Vishay
23/22+
5000
USD 0
SIHB35N60E-GE3 Vishay 22+
Vishay
22+
5000
USD 0
SIHB35N60E-GE3 Vishay 23/22+
Vishay
23/22+
5000
USD 0
SIHB35N60E-GE3 Vishay Siliconix 23+
Vishay Siliconix
23+
16660
USD 0
SIHB35N60E-GE3 Vishay Siliconix 21+
Vishay Siliconix
21+
1792
USD 0
SIHB35N60E-GE3 Vishay 23/22+
Vishay
23/22+
5000
USD 0
SIHB35N60E-GE3 Vishay 22+
Vishay
22+
5000
USD 0
SIHB35N60E-GE3 Vishay 23/22+
Vishay
23/22+
5000
USD 0
SIHB35N60E-GE3 Vishay Siliconix 23+
Vishay Siliconix
23+
16660
USD 0
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