| Part Number: | SIHB33N60EGE3 |
| Product Name: | SIHB33N60EGE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SIHB33N60EGE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET N-CH 600V 33A TO-263 |
| Series: | - |
| Packaging: | Bulk |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600V |
| Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3508pF @ 100V |
| Vgs (Max): | ±30V |
| FET Feature: | - |
| Power Dissipation (Max): | 278W (Tc) |
| Rds On (Max) @ Id, Vgs: | 99 mOhm @ 16.5A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D2PAK |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Part Number
Brand
D/C
Qty
SIHB33N60E-GE3 VISHAY
VISHAY
24569
USD 0
SIHB33N60E-GE3 VISHAY 2022
VISHAY
2022
21000
USD 0
SIHB33N60E-GE3
Vishay Siliconix
Vishay Siliconix
800
USD 0
SIHB33N60E-GE3 VISHAY 17+
VISHAY
17+
10000
USD 0
SIHB33N60E-GE3 ORIGINAL 22+
ORIGINAL
22+
5418
USD 0
SIHB33N60E-GE3 VISHAY
VISHAY
24569
USD 0
SIHB33N60E-GE3 VISHAY 2022
VISHAY
2022
21000
USD 0
SIHB33N60E-GE3
Vishay Siliconix
Vishay Siliconix
800
USD 0
SIHB33N60E-GE3 VISHAY 17+
VISHAY
17+
10000
USD 0
SIHB33N60E-GE3 ORIGINAL 22+
ORIGINAL
22+
5418
USD 0
Contact Us
Copyright © 2024 Hong Kong Inventory Limited. All Rights Reserved.Designated trademarks and brands are the property of their respective owners.
Use of this Website constitutes acceptance of Hong Kong Inventory Limited Terms of Use and Privacy Policy
