| Part Number: | SIHB30N60EGE3 |
| Product Name: | SIHB30N60EGE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SIHB30N60EGE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET N-CH 600V 29A D2PAK |
| Series: | - |
| Packaging: | Tube |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600V |
| Current - Continuous Drain (Id) @ 25°C: | 29A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2600pF @ 100V |
| Vgs (Max): | ±30V |
| FET Feature: | - |
| Power Dissipation (Max): | 250W (Tc) |
| Rds On (Max) @ Id, Vgs: | 125 mOhm @ 15A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D2PAK |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Part Number
Brand
D/C
Qty
SIHB30N60E-GE3 VISHAY
VISHAY
29150
USD 0
SIHB30N60EGE3 vishay 23+
vishay
23+
100000
USD 0
SIHB30N60E-GE3 VISHAY
VISHAY
29150
USD 0
SIHB30N60E-GE3 VISHAY
VISHAY
8000
USD 0
SIHB30N60E-GE3 VISHAY/
VISHAY/
60000
USD 0
SIHB30N60E-GE3 VISHAY
VISHAY
29150
USD 0
SIHB30N60EGE3 vishay 23+
vishay
23+
100000
USD 0
SIHB30N60E-GE3 VISHAY
VISHAY
29150
USD 0
SIHB30N60E-GE3 VISHAY
VISHAY
8000
USD 0
SIHB30N60E-GE3 VISHAY/
VISHAY/
60000
USD 0
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