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Home > Part Number Index > Index 74 > Product (Page: 5203) > SI8802DBT2E1

What is SI8802DBT2E1?

Part Number: SI8802DBT2E1
Product Name: SI8802DBT2E1 Transistors - FETs, MOSFETs - Single
Merchant-Specific Identifier: SI8802DBT2E1
Category: Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Brand: Vishay Siliconix
Description: MOSFET N-CH 8V MICROFOOT
Series: TrenchFET
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±5V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 54 mOhm @ 1A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA
Rated 5/5 based on 16 customer reviews
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single

SI8802DBT2E1

This is a cached page collected on 7/21/2024 5:07:57 AM, to receive our suppliers' latest quotation, please click View Today's Offer >>
This is a cached page collected on 7/21/2024 5:07:57 AM, to receive our suppliers' latest quotation, please click View Today's Offer >>

Hot Offer

Company

Part Number

Brand

D/C

Qty

Price (USD)

Qty

SI8802DB-T2-E1 VISHAY 0

VISHAY  

16+

1000

USD 0

SI8802DBT2E1

1 - 8 of 8 Suppliers
Company

Part Number

Brand

D/C

Qty

SI8802DB-T2-E1   VISHAY

 

VISHAY 

2150+

3000
USD 0

SI8802DB-T2-E1 VISHAY

VISHAY 

180
USD 0

SI8802DB-T2-E1 Vishay

Vishay 

22+

1600
USD 0

SI8802DB-T2-E1   VISHAY

 

VISHAY 

2150+

3000
USD 0

SI8802DB-T2-E1 VISHAY

VISHAY 

180
USD 0

SI8802DB-T2-E1 Vishay

Vishay 

22+

1600
USD 0

This is a cached page collected on 7/21/2024 5:07:57 AM, to receive our suppliers' latest quotation, please click View Today's Offer >>
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