| Part Number: | SI8429DBT1E1 |
| Product Name: | SI8429DBT1E1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SI8429DBT1E1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET P-CH 8V 11.7A 2X2 4-MFP |
| Series: | TrenchFET |
| Packaging: | Tape & Reel (TR) |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 8V |
| Current - Continuous Drain (Id) @ 25°C: | 11.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
| Vgs(th) (Max) @ Id: | 800mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1640pF @ 4V |
| Vgs (Max): | ±5V |
| FET Feature: | - |
| Power Dissipation (Max): | 2.77W (Ta), 6.25W (Tc) |
| Rds On (Max) @ Id, Vgs: | 35 mOhm @ 1A, 4.5V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 4-Microfoot |
| Package / Case: | 4-XFBGA, CSPBGA |
Part Number
Brand
D/C
Qty
SI8429DB-T1-E1 VISHAY
VISHAY
60751
USD 0
SI8429DB-T1-E1 Vishay 23+
Vishay
23+
2645
USD 0
SI8429DB-T1-E1
VISHAY
1217+
VISHAY
1217+
52
USD 0
SI8429DB-T1-E1 VISHAY/
VISHAY/
57116
USD 0
SI8429DB-T1-E1 VISHAY
VISHAY
60751
USD 0
SI8429DB-T1-E1 Vishay 23+
Vishay
23+
2645
USD 0
SI8429DB-T1-E1
VISHAY
1217+
VISHAY
1217+
52
USD 0
SI8429DB-T1-E1 VISHAY/
VISHAY/
57116
USD 0
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