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Home > Part Number Index > Index 10 > Product (Page: 294) > SI8417DBT2E1

What is SI8417DBT2E1?

Part Number: SI8417DBT2E1
Product Name: SI8417DBT2E1 Transistors - FETs, MOSFETs - Single
Merchant-Specific Identifier: SI8417DBT2E1
Category: Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Brand: Vishay Siliconix
Description: MOSFET P-CH 12V 14.5A 2X2 6MFP
Series: TrenchFET
Packaging: Tape & Reel (TR)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 6V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 2.9W (Ta), 6.57W (Tc)
Rds On (Max) @ Id, Vgs: 21 mOhm @ 1A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-Micro Foot
Package / Case: 6-MICRO FOOT
Rated 4/5 based on 20 customer reviews
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single

SI8417DBT2E1

This is a cached page collected on 7/27/2024 2:52:39 AM, to receive our suppliers' latest quotation, please click View Today's Offer >>
This is a cached page collected on 7/27/2024 2:52:39 AM, to receive our suppliers' latest quotation, please click View Today's Offer >>

SI8417DBT2E1

1 - 10 of 10 Suppliers
Company

Part Number

Brand

D/C

Qty

Si8417DB-T2-E1   QFN

 

QFN 

11+

12000
USD 0

Si8417DB-T2-E1 VISHAY/

VISHAY/ 

2022

49610
USD 0

Si8417DB-T2-E1 VISHAY/

VISHAY/ 

49610
USD 0

SI8417DB-T2-E1 VISHAY

VISHAY 

171000
USD 0

Si8417DB-T2-E1   QFN

 

QFN 

11+

12000
USD 0

Si8417DB-T2-E1 VISHAY/

VISHAY/ 

2022

49610
USD 0

Si8417DB-T2-E1 VISHAY/

VISHAY/ 

49610
USD 0

SI8417DB-T2-E1 VISHAY

VISHAY 

171000
USD 0

This is a cached page collected on 7/27/2024 2:52:39 AM, to receive our suppliers' latest quotation, please click View Today's Offer >>
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