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Home > Part Number Index > Index 81 > Product (Page: 2417) > SI8402DBT1E1

What is SI8402DBT1E1?

Part Number: SI8402DBT1E1
Product Name: SI8402DBT1E1 Transistors - FETs, MOSFETs - Single
Merchant-Specific Identifier: SI8402DBT1E1
Category: Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Brand: Vishay Siliconix
Description: MOSFET N-CH 20V 5.3A 2X2 4-MFP
Series: TrenchFET
Packaging:
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 1.47W (Ta)
Rds On (Max) @ Id, Vgs: 37 mOhm @ 1A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
Rated 5/5 based on 19 customer reviews
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single

SI8402DBT1E1

This is a cached page collected on 6/9/2024 8:26:29 AM, to receive our suppliers' latest quotation, please click View Today's Offer >>
This is a cached page collected on 6/9/2024 8:26:29 AM, to receive our suppliers' latest quotation, please click View Today's Offer >>

SI8402DBT1E1

1 - 10 of 10 Suppliers
Company

Part Number

Brand

D/C

Qty

SI8402DB-T1-E1 VISHAY/

VISHAY/ 

22+

33992
USD 0

SI8402DBT1E1 VISHAY/

VISHAY/ 

10236
USD 0

SI8402DB-T1-E1   VISHAY

 

VISHAY 

6410
USD 0

SI8402DB-T1-E1 VISHAY/

VISHAY/ 

2022

32872
USD 0

SI8402DB-T1-E1. -

11001
USD 0

SI8402DB-T1-E1 VISHAY/

VISHAY/ 

22+

33992
USD 0

SI8402DBT1E1 VISHAY/

VISHAY/ 

10236
USD 0

SI8402DB-T1-E1   VISHAY

 

VISHAY 

6410
USD 0

SI8402DB-T1-E1 VISHAY/

VISHAY/ 

2022

32872
USD 0

SI8402DB-T1-E1. -

11001
USD 0

This is a cached page collected on 6/9/2024 8:26:29 AM, to receive our suppliers' latest quotation, please click View Today's Offer >>
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