| Part Number: | SI6435ADQT1GE3 |
| Product Name: | SI6435ADQT1GE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SI6435ADQT1GE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET P-CH 30V 4.7A 8-TSSOP |
| Series: | TrenchFET |
| Packaging: | |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 4.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 1.05W (Ta) |
| Rds On (Max) @ Id, Vgs: | 30 mOhm @ 5.5A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-TSSOP |
| Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Part Number
Brand
D/C
Qty
SI6435ADQ-T1-GE3 VBSEMI/ 22+
VBSEMI/
22+
22205
USD 0
SI6435ADQ-T1-GE3 VISHAY 21+
VISHAY
21+
6020
USD 0
SI6435ADQ-T1-GE3 VBsemi 21+
VBsemi
21+
10065
USD 0
SI6435ADQ-T1-GE3 VISHAY 2018+
VISHAY
2018+
21535
USD 0
SI6435ADQ-T1-GE3 VBSEMI/ 22+
VBSEMI/
22+
22205
USD 0
SI6435ADQ-T1-GE3 VISHAY 21+
VISHAY
21+
6020
USD 0
SI6435ADQ-T1-GE3 VBsemi 21+
VBsemi
21+
10065
USD 0
SI6435ADQ-T1-GE3 VISHAY 2018+
VISHAY
2018+
21535
USD 0
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