| Part Number: | SI4477DYT1GE3 |
| Product Name: | SI4477DYT1GE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SI4477DYT1GE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET P-CH 20V 26.6A 8-SOIC |
| Series: | TrenchFET |
| Packaging: | Tape & Reel (TR) |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 26.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 190nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 4600pF @ 10V |
| Vgs (Max): | ±12V |
| FET Feature: | - |
| Power Dissipation (Max): | 3W (Ta), 6.6W (Tc) |
| Rds On (Max) @ Id, Vgs: | 6.2 mOhm @ 18A, 4.5V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-SO |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Part Number
Brand
D/C
Qty
Price (USD)
Qty
SI4477DY-T1-GE3 VISHAY 12+ 0
VISHAY
12+
15000
USD 0
Part Number
Brand
D/C
Qty
SI4477DY-T1-GE3 VISHAY
VISHAY
78
USD 0
SI4477DY-T1-GE3 VISHAY
VISHAY
180
USD 0
SI4477DY-T1-GE3 VISHAY
VISHAY
180
USD 0
SI4477DY-T1-GE3
400
USD 0
SI4477DY-T1-GE3 VISHAY
VISHAY
78
USD 0
SI4477DY-T1-GE3 VISHAY
VISHAY
180
USD 0
SI4477DY-T1-GE3 VISHAY
VISHAY
180
USD 0
SI4477DY-T1-GE3
400
USD 0
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