| Part Number: | SI4100DYT1GE3 |
| Product Name: | SI4100DYT1GE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SI4100DYT1GE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET N-CH 100V 6.8A 8-SOIC |
| Series: | TrenchFET |
| Packaging: | |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 6.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 50V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 2.5W (Ta), 6W (Tc) |
| Rds On (Max) @ Id, Vgs: | 63 mOhm @ 4.4A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-SO |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Part Number
Brand
D/C
Qty
SI4100DY-T1-GE3 VISHAY
VISHAY
12500
USD 0
SI4100DY-T1-GE3 VISHAY 23+
VISHAY
23+
50000
USD 0
Si4100DY-T1-GE3 VISHAY 21+
VISHAY
21+
2500
USD 0
SI4100DY-T1-GE3
VISHAY
VISHAY
850000
USD 0
SI4100DY-T1-GE3 VISHAY/
VISHAY/
23632
USD 0
SI4100DY-T1-GE3 VISHAY
VISHAY
12500
USD 0
SI4100DY-T1-GE3 VISHAY 23+
VISHAY
23+
50000
USD 0
Si4100DY-T1-GE3 VISHAY 21+
VISHAY
21+
2500
USD 0
SI4100DY-T1-GE3
VISHAY
VISHAY
850000
USD 0
SI4100DY-T1-GE3 VISHAY/
VISHAY/
23632
USD 0
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