| Part Number: | SI3460DDVT1GE3 |
| Product Name: | SI3460DDVT1GE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SI3460DDVT1GE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET N-CH 20V 7.9A 6-TSOP |
| Series: | TrenchFET |
| Packaging: | Cut Tape (CT) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 7.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds: | 666pF @ 10V |
| Vgs (Max): | ±8V |
| FET Feature: | - |
| Power Dissipation (Max): | 1.7W (Ta), 2.7W (Tc) |
| Rds On (Max) @ Id, Vgs: | 28 mOhm @ 5.1A, 4.5V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 6-TSOP |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Part Number
Brand
D/C
Qty
SI3460DDV-T1-GE3 VISH 19
VISH
19
3000
USD 0
SI3460DDV-T1-GE3 VISH 1822
VISH
1822
3314
USD 0
SI3460DDV-T1-GE3 VISHAY/ 2022
VISHAY/
2022
4868000
USD 0
SI3460DDV-T1-GE3 VISHAY 19+
VISHAY
19+
12528
USD 0
SI3460DDV-T1-GE3 mosfet 2023
mosfet
2023
50000
USD 0
SI3460DDV-T1-GE3 VISH 19
VISH
19
3000
USD 0
SI3460DDV-T1-GE3 VISH 1822
VISH
1822
3314
USD 0
SI3460DDV-T1-GE3 VISHAY/ 2022
VISHAY/
2022
4868000
USD 0
SI3460DDV-T1-GE3 VISHAY 19+
VISHAY
19+
12528
USD 0
SI3460DDV-T1-GE3 mosfet 2023
mosfet
2023
50000
USD 0
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