| Part Number: | SI3459BDVT1GE3 |
| Product Name: | SI3459BDVT1GE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SI3459BDVT1GE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET P-CH 60V 2.9A 6-TSOP |
| Series: | TrenchFET |
| Packaging: | Cut Tape (CT) |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 2.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 30V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 2W (Ta), 3.3W (Tc) |
| Rds On (Max) @ Id, Vgs: | 216 mOhm @ 2.2A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 6-TSOP |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Part Number
Brand
D/C
Qty
SI3459BDV-T1-GE3 VISHAY
VISHAY
63025
USD 0
SI3459BDV-T1-GE3 VISHAY
VISHAY
36000
USD 0
SI3459BDV-T1-GE3 VISHAY 22+
VISHAY
22+
36000
USD 0
Si3459BDV-T1-GE3 MOS VISHAY 20+
VISHAY
20+
6000
USD 0
Si3459BDV-T1-GE3 VISHAY 20+
VISHAY
20+
44900
USD 0
SI3459BDV-T1-GE3 VISHAY
VISHAY
63025
USD 0
SI3459BDV-T1-GE3 VISHAY
VISHAY
36000
USD 0
SI3459BDV-T1-GE3 VISHAY 22+
VISHAY
22+
36000
USD 0
Si3459BDV-T1-GE3 MOS VISHAY 20+
VISHAY
20+
6000
USD 0
Si3459BDV-T1-GE3 VISHAY 20+
VISHAY
20+
44900
USD 0
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