Part Number: | SI3127DVT1GE3 |
Product Name: | SI3127DVT1GE3 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | SI3127DVT1GE3 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Vishay Siliconix |
Description: | MOSFET P-CHAN 60V TSOP6S |
Series: | TrenchFET |
Packaging: | Cut Tape (CT) |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta), 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 833pF @ 20V |
Vgs (Max): | ±20V |
FET Feature: | - |
Power Dissipation (Max): | 2W (Ta), 4.2W (Tc) |
Rds On (Max) @ Id, Vgs: | 89 mOhm @ 1.5A, 4.5V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-TSOP |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Part Number
Brand
D/C
Qty
Price (USD)
Qty
Si3127DV-T1-GE3 Vishay 22+ 0
Vishay
22+
55200
USD 0
SI3127DV-T1-GE3 LVM 22 0
LVM
22
51000
USD 0
SI3127DV-T1-GE3 LVM 21 0
LVM
21
105000
USD 0
Part Number
Brand
D/C
Qty
SI3127DV-T1-GE3 VISHAY
VISHAY
19699
USD 0
SI3127DV-T1-GE3 VISHAY
VISHAY
29100
USD 0
SI3127DV-T1-GE3 VISHAY
VISHAY
19699
USD 0
SI3127DV-T1-GE3 VISHAY
VISHAY
29100
USD 0