| Part Number: | SI2335DST1GE3 |
| Product Name: | SI2335DST1GE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SI2335DST1GE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET P-CH 12V 3.2A SOT23-3 |
| Series: | TrenchFET |
| Packaging: | Tape & Reel (TR) |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 12V |
| Current - Continuous Drain (Id) @ 25°C: | 3.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 450mV @ 250µA (Min) |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1225pF @ 6V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 750mW (Ta) |
| Rds On (Max) @ Id, Vgs: | 51 mOhm @ 4A, 4.5V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Part Number
Brand
D/C
Qty
Si2335DS-T1-GE3 VISHAY
VISHAY
31336
USD 0
SI2335DS-T1-GE3 VISHAY/ 2022
VISHAY/
2022
4868000
USD 0
Si2335DS-T1-GE3 VISHAY 23+
VISHAY
23+
3000
USD 0
Si2335DS-T1-GE3 VISHAY 20+
VISHAY
20+
100000
USD 0
Si2335DS-T1-GE3 VISHAY/
VISHAY/
14000
USD 0
Si2335DS-T1-GE3 VISHAY
VISHAY
31336
USD 0
SI2335DS-T1-GE3 VISHAY/ 2022
VISHAY/
2022
4868000
USD 0
Si2335DS-T1-GE3 VISHAY 23+
VISHAY
23+
3000
USD 0
Si2335DS-T1-GE3 VISHAY 20+
VISHAY
20+
100000
USD 0
Si2335DS-T1-GE3 VISHAY/
VISHAY/
14000
USD 0
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