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Home > Part Number Index > Index 23 > Product (Page: 3685) > SI2312CDST1GE3

What is SI2312CDST1GE3?

Part Number: SI2312CDST1GE3
Product Name: SI2312CDST1GE3 Transistors - FETs, MOSFETs - Single
Merchant-Specific Identifier: SI2312CDST1GE3
Category: Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Brand: Vishay Siliconix
Description: MOSFET N-CH 20V 6A SOT-23
Series: TrenchFET
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 31.8 mOhm @ 5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Rated 4/5 based on 19 customer reviews
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single

SI2312CDST1GE3

This is a cached page collected on 7/18/2024 2:05:54 AM, to receive our suppliers' latest quotation, please click View Today's Offer >>
This is a cached page collected on 7/18/2024 2:05:54 AM, to receive our suppliers' latest quotation, please click View Today's Offer >>

Hot Offer

Company

Part Number

Brand

D/C

Qty

Price (USD)

Qty

SI2312CDS-T1-GE3 VISHAY 0

VISHAY  

23+

71000

USD 0

SI2312CDST1GE3

1 - 6 of 6 Suppliers
Company

Part Number

Brand

D/C

Qty

SI2312CDS-T1-GE3 VISHAY

VISHAY 

180
USD 0

SI2312CDS-T1-GE3 VISHAY

VISHAY 

180
USD 0

SI2312CDS-T1-GE3 VISHAY

VISHAY 

180
USD 0

SI2312CDS-T1-GE3 VISHAY

VISHAY 

180
USD 0

This is a cached page collected on 7/18/2024 2:05:54 AM, to receive our suppliers' latest quotation, please click View Today's Offer >>
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