| Part Number: | SI2308BDST1GE3 |
| Product Name: | SI2308BDST1GE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SI2308BDST1GE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET N-CH 60V 2.3A SOT23-3 |
| Series: | TrenchFET |
| Packaging: | Tape & Reel (TR) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 2.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 6.8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 190pF @ 30V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 1.09W (Ta), 1.66W (Tc) |
| Rds On (Max) @ Id, Vgs: | 156 mOhm @ 1.9A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Part Number
Brand
D/C
Qty
Price (USD)
Qty
SI2308BDS-T1-GE3 DIODES 22+ 0
DIODES
22+
280000
USD 0
SI2308BDS-T1-GE3 23+ 0
23+
10283
USD 0
SI2308BDS-T1-GE3 VISHAY 23+ 0
VISHAY
23+
200000
USD 0
Part Number
Brand
D/C
Qty
SI2308BDST1GE3 VISHAY
VISHAY
11000
USD 0
SI2308BDS-T1-GE3 VISHAY
VISHAY
66000
USD 0
SI2308BDST1GE3 VISHAY
VISHAY
11000
USD 0
SI2308BDS-T1-GE3 VISHAY
VISHAY
66000
USD 0
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