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Home > Part Number Index > Index 80 > Product (Page: 5372) > SI2305CDST1GE3

What is SI2305CDST1GE3?

Part Number: SI2305CDST1GE3
Product Name: SI2305CDST1GE3 Transistors - FETs, MOSFETs - Single
Merchant-Specific Identifier: SI2305CDST1GE3
Category: Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Brand: Vishay Siliconix
Description: MOSFET P-CH 8V 5.8A SOT23-3
Series: TrenchFET
Packaging: Tape & Reel (TR)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 4V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.4A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Rated 5/5 based on 8 customer reviews
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single

SI2305CDST1GE3

This is a cached page collected on 12/26/2024 3:00:11 AM, to receive our suppliers' latest quotation, please click View Today's Offer >>
This is a cached page collected on 12/26/2024 3:00:11 AM, to receive our suppliers' latest quotation, please click View Today's Offer >>

Hot Offer

Company

Part Number

Brand

D/C

Qty

Price (USD)

Qty

SI2305CDS-T1-GE3 Vishay(威世) 0

 

Vishay(威世)  

22+/23+

1520

USD 0

SI2305CDS-T1-GE3 VISHAY 0

VISHAY  

22+

54000

USD 0

SI2305CDS-T1-GE3 VISHAY 0

VISHAY  

21+CN

54000

USD 0

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