Part Number: | SI2305CDST1GE3 |
Product Name: | SI2305CDST1GE3 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | SI2305CDST1GE3 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Vishay Siliconix |
Description: | MOSFET P-CH 8V 5.8A SOT23-3 |
Series: | TrenchFET |
Packaging: | Tape & Reel (TR) |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 8V |
Current - Continuous Drain (Id) @ 25°C: | 5.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: | 960pF @ 4V |
Vgs (Max): | ±8V |
FET Feature: | - |
Power Dissipation (Max): | 960mW (Ta), 1.7W (Tc) |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 4.4A, 4.5V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 (TO-236) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Part Number
Brand
D/C
Qty
Price (USD)
Qty
SI2305CDS-T1-GE3 VISHAY 22+ 0
VISHAY
22+
54000
USD 0
SI2305CDS-T1-GE3 VISHAY 21+CN 0
VISHAY
21+CN
54000
USD 0
SI2305CDS-T1-GE3 0
108000
USD 0
SI2305CDS-T1-GE3 VISHAY 2021 0
VISHAY
2021
60000
USD 0