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Home > Part Number Index > Index 32 > Product (Page: 3945) > RN4906FELF

What is RN4906FELF?

Part Number: RN4906FELF
Product Name: RN4906FELF Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Merchant-Specific Identifier: RN4906FELF
Category: Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Brand: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Series: -
Packaging: Tape & Reel (TR)
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6
Rated 4/5 based on 1 customer reviews
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased

RN4906FELF

This is a cached page collected on 2/27/2024 5:29:29 AM, to receive our suppliers' latest quotation, please click View Today's Offer >>
This is a cached page collected on 2/27/2024 5:29:29 AM, to receive our suppliers' latest quotation, please click View Today's Offer >>

RN4906FELF

1 - 10 of 10 Suppliers
Company

Part Number

Brand

D/C

Qty

RN4906FE,LF(CB Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage 

15000
USD 0

RN4906FE,LF(CT Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage 

2023+

58338
USD 0

RN4906FE,LF(CB Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage 

15000
USD 0

RN4906FE,LF(CT Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage 

2023+

58338
USD 0

This is a cached page collected on 2/27/2024 5:29:29 AM, to receive our suppliers' latest quotation, please click View Today's Offer >>
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