Part Number: | RN2961 |
Product Name: | RN2961 Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Merchant-Specific Identifier: | RN2961 |
Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand: | Toshiba Semiconductor and Storage |
Description: | TRANS 2PNP PREBIAS 0.2W US6 |
Series: | - |
Packaging: | Cut Tape (CT) |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1) (Ohms): | 4.7k |
Resistor - Emitter Base (R2) (Ohms): | 4.7k |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | US6 |
Part Number
Brand
D/C
Qty
RN2961(TE85LF) TOS 2022
TOS
2022
14745
USD 0
RN2961 TE85LF TOS 20+
TOS
20+
3745
USD 0
RN2961(TE85L,F) Toshiba Semiconductor and Storage 2023+
Toshiba Semiconductor and Storage
2023+
58338
USD 0
RN2961(TE85L,F) 8-SOIC (0.154", 3.90mm Width)
8-SOIC (0.154", 3.90mm Width)
860
USD 0
RN2961(TE85L,F) Toshiba Semiconductor and Storage 21+
Toshiba Semiconductor and Storage
21+
2567
USD 0
RN2961(TE85LF) TOS 2022
TOS
2022
14745
USD 0
RN2961 TE85LF TOS 20+
TOS
20+
3745
USD 0
RN2961(TE85L,F) Toshiba Semiconductor and Storage 2023+
Toshiba Semiconductor and Storage
2023+
58338
USD 0
RN2961(TE85L,F) 8-SOIC (0.154", 3.90mm Width)
8-SOIC (0.154", 3.90mm Width)
860
USD 0
RN2961(TE85L,F) Toshiba Semiconductor and Storage 21+
Toshiba Semiconductor and Storage
21+
2567
USD 0