| Part Number: | RN2711JE |
| Product Name: | RN2711JE Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Merchant-Specific Identifier: | RN2711JE |
| Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | TRANS 2PNP PREBIAS 0.1W ESV |
| Series: | - |
| Packaging: | Tape & Reel (TR) |
| Transistor Type: | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1) (Ohms): | 10k |
| Resistor - Emitter Base (R2) (Ohms): | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Frequency - Transition: | 200MHz |
| Power - Max: | 100mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-553 |
| Supplier Device Package: | ESV |
Part Number
Brand
D/C
Qty
RN2711JE(TE85L,F) Toshiba
Toshiba
12000
USD 0
RN2711JE(TE85L,F) 8-SOIC (0.154", 3.90mm Width)
8-SOIC (0.154", 3.90mm Width)
1751
USD 0
RN2711JE(TE85L,F) Toshiba Semiconductor and Storage 21+
Toshiba Semiconductor and Storage
21+
2141
USD 0
RN2711JE TOSHIBA/
TOSHIBA/
100000
USD 0
RN2711JE(TE85L,F) Toshiba Semiconductor and Storage 2023+
Toshiba Semiconductor and Storage
2023+
58338
USD 0
RN2711JE(TE85L,F) Toshiba
Toshiba
12000
USD 0
RN2711JE(TE85L,F) 8-SOIC (0.154", 3.90mm Width)
8-SOIC (0.154", 3.90mm Width)
1751
USD 0
RN2711JE(TE85L,F) Toshiba Semiconductor and Storage 21+
Toshiba Semiconductor and Storage
21+
2141
USD 0
RN2711JE TOSHIBA/
TOSHIBA/
100000
USD 0
RN2711JE(TE85L,F) Toshiba Semiconductor and Storage 2023+
Toshiba Semiconductor and Storage
2023+
58338
USD 0
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