Part Number: | RN2422TE85LF |
Product Name: | RN2422TE85LF Transistors - Bipolar (BJT) - Single, Pre-Biased |
Merchant-Specific Identifier: | RN2422TE85LF |
Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand: | Toshiba Semiconductor and Storage |
Description: | TRANS PREBIAS PNP 200MW SMINI |
Series: | - |
Packaging: | Tape & Reel (TR) |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1) (Ohms): | 2.2k |
Resistor - Emitter Base (R2) (Ohms): | 2.2k |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 65 @ 100mA, 1V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 50mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | S-Mini |
Part Number
Brand
D/C
Qty
RN2422TE85LF Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
8000
USD 0
RN2422TE85LF TOSHIBA 22+
TOSHIBA
22+
35800
USD 0
RN2422TE85LF Toshiba Semiconductor and Storage 21+
Toshiba Semiconductor and Storage
21+
81630
USD 0
RN2422TE85LF Toshiba Semiconductor and Storage 21+
Toshiba Semiconductor and Storage
21+
1000
USD 0
RN2422TE85LF Toshiba Semiconductor and Storage 22+
Toshiba Semiconductor and Storage
22+
9000
USD 0
RN2422TE85LF Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
8000
USD 0
RN2422TE85LF TOSHIBA 22+
TOSHIBA
22+
35800
USD 0
RN2422TE85LF Toshiba Semiconductor and Storage 21+
Toshiba Semiconductor and Storage
21+
81630
USD 0
RN2422TE85LF Toshiba Semiconductor and Storage 21+
Toshiba Semiconductor and Storage
21+
1000
USD 0
RN2422TE85LF Toshiba Semiconductor and Storage 22+
Toshiba Semiconductor and Storage
22+
9000
USD 0