| Part Number: | RN1962FE |
| Product Name: | RN1962FE Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Merchant-Specific Identifier: | RN1962FE |
| Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | TRANS 2NPN PREBIAS 0.1W ES6 |
| Series: | - |
| Packaging: | Cut Tape (CT) |
| Transistor Type: | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1) (Ohms): | 10k |
| Resistor - Emitter Base (R2) (Ohms): | 10k |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Frequency - Transition: | 250MHz |
| Power - Max: | 100mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-563, SOT-666 |
| Supplier Device Package: | ES6 |
Part Number
Brand
D/C
Qty
RN1962FE TOSHIBA
TOSHIBA
110890
USD 0
RN1962FE TOSHIBA
TOSHIBA
55300
USD 0
RN1962FE TOSHIBA/ 2022
TOSHIBA/
2022
15000
USD 0
RN1962FE(TE85L,F)
532
USD 0
RN1962FE(TE85L,F) Toshiba Semiconductor and Storage 21+
Toshiba Semiconductor and Storage
21+
10454
USD 0
RN1962FE TOSHIBA
TOSHIBA
110890
USD 0
RN1962FE TOSHIBA
TOSHIBA
55300
USD 0
RN1962FE TOSHIBA/ 2022
TOSHIBA/
2022
15000
USD 0
RN1962FE(TE85L,F)
532
USD 0
RN1962FE(TE85L,F) Toshiba Semiconductor and Storage 21+
Toshiba Semiconductor and Storage
21+
10454
USD 0
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