Part Number: | RN1908FE |
Product Name: | RN1908FE Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Merchant-Specific Identifier: | RN1908FE |
Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand: | Toshiba Semiconductor and Storage |
Description: | TRANS 2NPN PREBIAS 0.1W ES6 |
Series: | - |
Packaging: | Tape & Reel (TR) |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1) (Ohms): | 22k |
Resistor - Emitter Base (R2) (Ohms): | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
Part Number
Brand
D/C
Qty
RN1908FE TOSHIBA
TOSHIBA
25924
USD 0
RN1908FE TOSHIBA
TOSHIBA
25924
USD 0
RN1908FE TOSHIBA/
TOSHIBA/
15109
USD 0
RN1908FE TOSHIBA
TOSHIBA
4000
USD 0
RN1908FE TOSHIBA 21+
TOSHIBA
21+
8000
USD 0
RN1908FE TOSHIBA
TOSHIBA
25924
USD 0
RN1908FE TOSHIBA
TOSHIBA
25924
USD 0
RN1908FE TOSHIBA/
TOSHIBA/
15109
USD 0
RN1908FE TOSHIBA
TOSHIBA
4000
USD 0
RN1908FE TOSHIBA 21+
TOSHIBA
21+
8000
USD 0