| Part Number: | RN1427TE85LF |
| Product Name: | RN1427TE85LF Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Merchant-Specific Identifier: | RN1427TE85LF |
| Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | TRANS PREBIAS NPN 200MW SMINI |
| Series: | - |
| Packaging: | Tape & Reel (TR) |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 800mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1) (Ohms): | 2.2k |
| Resistor - Emitter Base (R2) (Ohms): | 10k |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 90 @ 100mA, 1V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 50mA |
| Current - Collector Cutoff (Max): | 500nA |
| Frequency - Transition: | 300MHz |
| Power - Max: | 200mW |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | S-Mini |
Part Number
Brand
D/C
Qty
RN1427TE85LF TOSHIBA 22+
TOSHIBA
22+
8750
USD 0
RN1427TE85LF Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
8000
USD 0
RN1427TE85LF TOSHIBA 22+
TOSHIBA
22+
225800
USD 0
RN1427TE85LF TOSHIBA/
TOSHIBA/
22000
USD 0
RN1427TE85LF Toshiba Semiconductor and Storage 21+
Toshiba Semiconductor and Storage
21+
81630
USD 0
RN1427TE85LF TOSHIBA 22+
TOSHIBA
22+
8750
USD 0
RN1427TE85LF Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
8000
USD 0
RN1427TE85LF TOSHIBA 22+
TOSHIBA
22+
225800
USD 0
RN1427TE85LF TOSHIBA/
TOSHIBA/
22000
USD 0
RN1427TE85LF Toshiba Semiconductor and Storage 21+
Toshiba Semiconductor and Storage
21+
81630
USD 0
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