Part Number: | RN1426TE85LF |
Product Name: | RN1426TE85LF Transistors - Bipolar (BJT) - Single, Pre-Biased |
Merchant-Specific Identifier: | RN1426TE85LF |
Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand: | Toshiba Semiconductor and Storage |
Description: | TRANS PREBIAS NPN 200MW SMINI |
Series: | - |
Packaging: | Tape & Reel (TR) |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1) (Ohms): | 1k |
Resistor - Emitter Base (R2) (Ohms): | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 90 @ 100mA, 1V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 50mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 300MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | S-Mini |
Part Number
Brand
D/C
Qty
RN1426TE85LF Toshiba 22+
Toshiba
22+
8252
USD 0
RN1426TE85LF Toshiba 23/22+
Toshiba
23/22+
5000
USD 0
RN1426TE85LF
84
USD 0
RN1426TE85LF Toshiba 22+
Toshiba
22+
5000
USD 0
RN1426TE85LF Toshiba 22+
Toshiba
22+
8252
USD 0
RN1426TE85LF Toshiba 22+
Toshiba
22+
8252
USD 0
RN1426TE85LF Toshiba 23/22+
Toshiba
23/22+
5000
USD 0
RN1426TE85LF
84
USD 0
RN1426TE85LF Toshiba 22+
Toshiba
22+
5000
USD 0
RN1426TE85LF Toshiba 22+
Toshiba
22+
8252
USD 0