Part Number: | RN1309 |
Product Name: | RN1309 Transistors - Bipolar (BJT) - Single, Pre-Biased |
Merchant-Specific Identifier: | RN1309 |
Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand: | Toshiba Semiconductor and Storage |
Description: | TRANS PREBIAS NPN 0.1W USM |
Series: | - |
Packaging: | Cut Tape (CT) |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1) (Ohms): | 47k |
Resistor - Emitter Base (R2) (Ohms): | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | USM |
Part Number
Brand
D/C
Qty
RN1309 TOSHIBA/ 2022
TOSHIBA/
2022
29000
USD 0
RN1309(TE85LF) TOS 12
TOS
12
1002
USD 0
RN1309 TOSHIBA 00+
TOSHIBA
00+
15000
USD 0
RN1309 TOSHIBA 14+
TOSHIBA
14+
52880
USD 0
RN1309 TOSHIBA/ 2022
TOSHIBA/
2022
29000
USD 0
RN1309(TE85LF) TOS 12
TOS
12
1002
USD 0
RN1309 TOSHIBA 00+
TOSHIBA
00+
15000
USD 0
RN1309 TOSHIBA 14+
TOSHIBA
14+
52880
USD 0